The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Aug. 09, 2022
Hamamatsu Photonics K.k., Hamamatsu, JP;
Wei Dong, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;
Abstract
A photodetector includes: a first conductive type semiconductor layer; a semiconductor light absorption layer provided on the first conductive type semiconductor layer; a scatterer that is provided with a width equal to or less than a wavelength of incident light so as to be in contact with the semiconductor light absorption layer and forms a localized non-uniform electric field inside the semiconductor light absorption layer by scattering the incident light; a second conductive type semiconductor layer provided on the semiconductor light absorption layer so as to be apart from the scatterer; and an extraction electrode that is provided on the second conductive type semiconductor layer so as to be apart from the scatterer and extracts a photocurrent generated in the semiconductor light absorption layer due to formation of the localized non-uniform electric field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile