The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Aug. 12, 2022
Canon Kabushiki Kaisha, Tokyo, JP;
Daiki Shirahige, Kanagawa, JP;
Hiroshi Sekine, Kanagawa, JP;
Shunichi Wakashima, Tokyo, JP;
Ginjiro Toyoguchi, Tokyo, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A pixel circuit of a photoelectric conversion device includes two photoelectric conversion elements, each including two impurity region in each of two different layers. In at least one pixel of the pixel circuits, a first separation region separating the two impurity regions in a first layer and a second separation region separating the two impurity regions in a second layer extend in directions different from each other in a planer view. An impurity region in a photoelectric conversion element includes a first portion overlapping the first separation region in the planar view, a second portion adjacent to a first transfer gate, and a third portion located on an opposite side of the second portion with respect to the first portion. The impurity region has a potential distribution monotonically decreasing from the third portion to the second portion for signal charges.