The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Jul. 01, 2024
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventor:
Yasuhiro Kawakami, Kyoto, JP;
Assignee:
ROHM CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/832 (2025.01); H01L 21/04 (2006.01); H10D 8/01 (2025.01); H10D 8/60 (2025.01); H10D 64/23 (2025.01); H10D 64/64 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8325 (2025.01); H01L 21/0495 (2013.01); H10D 8/051 (2025.01); H10D 8/60 (2025.01); H10D 64/23 (2025.01); H10D 64/64 (2025.01);
Abstract
A semiconductor device according to the present invention includes a first conductive-type Sic semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.
Quick Actions:
Kawakami, Yasuhiro. (2026). Semiconductor device having a junction portion contacting a schottky metal (U.S. Patent No. 12543360). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12543360
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile