The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Jul. 25, 2023
Kabushiki Kaisha Toshiba, Tokyo, JP;
Aya Shindome, Yokohama Kanagawa, JP;
Ikuo Fujiwara, Yokohama Kanagawa, JP;
Hiroshi Ono, Tokyo, JP;
Yosuke Kajiwara, Yokohama Kanagawa, JP;
Masahiko Kuraguchi, Yokohama Kanagawa, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, a first insulating member, and a second insulating member. The third electrode includes a first electrode portion and a second electrode portion. The first semiconductor region includes AlGaN (0≤x1<1). The second semiconductor region includes AlGaN (0<x2<1, x1<x2). The first nitride region includes AlGaN (0<z1≤1, x2<z1). The second insulating member includes a first insulating region. A part of the first insulating region is located between the fifth partial region of the first semiconductor region and the second electrode portion of the third electrode in the second direction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile