The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Mar. 14, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Chang Ju Yeom, Seoul, KR;
Chang Su Jeon, Hwaseong-si, KR;
Jung Min Oh, Incheon, KR;
Sang Won Bae, Suwon-si, KR;
Jae Sung Lee, Suwon-si, KR;
Hyo San Lee, Hwaseong-si, KR;
Jung Hun Lim, Daejeon, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Soulbrain Co., Ltd., Seongnam-Si, KR;
Abstract
A method for manufacturing a semiconductor device, the method including forming a fin type pattern including a lower pattern and an upper pattern on a substrate, the upper pattern including a plurality of sacrificial layers and a plurality of sheet patterns alternately stacked on the lower pattern; forming a field insulating film on the substrate and the fin type pattern such that the field insulation film covers side walls of the lower pattern; forming a passivation film on the field insulating film such that the passivation film extends along an upper surface of the field insulating film; and removing the plurality of sacrificial layers after forming the passivation film.