The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Sep. 23, 2022
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Je-Hsiung Lan, San Diego, CA (US);
Jonghae Kim, San Diego, CA (US);
Jui-Yi Chiu, Taichung, TW;
Kai Liu, Phoenix, AZ (US);
Nosun Park, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 1/20 (2025.01); H01F 27/24 (2006.01); H01F 27/28 (2006.01); H01F 41/04 (2006.01); H01L 25/16 (2023.01); H01L 25/18 (2023.01); H10D 86/85 (2025.01);
U.S. Cl.
CPC ...
H10D 1/20 (2025.01); H01F 27/24 (2013.01); H01F 27/2804 (2013.01); H01F 41/042 (2013.01); H01F 41/043 (2013.01); H01L 25/16 (2013.01); H01L 25/18 (2013.01); H10D 86/85 (2025.01);
Abstract
A device is described. The device includes a substrate having a first cavity. The device also includes a first redistribution layer (RDL) on sidewalls and a base of the first cavity in the substrate and on a first surface of the substrate. The device further includes a fill material in the first cavity.
Lan, Je-Hsiung. (2026). Inductive device structure and process method (U.S. Patent No. 12543328). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12543328
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile