The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Dec. 14, 2022
SK Hynix Inc., Icheon-si, KR;
Jong Min Yun, Icheon-si, KR;
SK HYNIX INC., Icheon-si, KR;
Abstract
An semiconductor device may include a first conductive line; a second conductive line disposed to be spaced apart from the first conductive line; a variable resistance layer disposed between the first conductive line and the second conductive line; and an electrode layer which is disposed at least one of a first location between the first conductive lines and the variable resistance layer, or a second location between the variable resistance layer and the second conductive lines and includes a thickness dependent metal-insulator transition (TDMIT) material that exhibits an electrical resistance depending on a thickness of the TDMIT material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile