The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Aug. 31, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Min Tae Ryu, Suwon-si, KR;
Byong-Deok Choi, Seoul, KR;
Sungwon Yoo, Suwon-si, KR;
Wonsok Lee, Suwon-si, KR;
Yongsang Yoo, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/4091 (2006.01); G11C 11/4094 (2006.01); G11C 11/4097 (2006.01); H10B 12/00 (2023.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10B 12/482 (2023.02); G11C 11/4091 (2013.01); G11C 11/4094 (2013.01); G11C 11/4097 (2013.01); H10B 12/312 (2023.02); H10B 12/315 (2023.02); H10B 12/50 (2023.02); H10D 1/716 (2025.01);
Abstract
A memory device includes a first memory cell connected to a first bitline and a second memory cell connected to a second bitline, wherein the first memory cell may include a first access transistor including one end connected to the first bitline, and a first capacitor including one electrode connected to another end of the first access transistor and another electrode connected to the second bitline, and the first access transistor may include an oxide semiconductor.