The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Apr. 13, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device comprises an active pattern on a substrate, a pair of first source/drain patterns on the active pattern, a pair of second source/drain patterns on top surfaces of the first source/drain patterns, a gate electrode extending across the active pattern and having sidewalls that face the first and second source/drain patterns, a first channel structure extending across the gate electrode and connecting the first source/drain patterns, and a second channel structure extending across the gate electrode and connecting the second source/drain patterns. The gate electrode includes a first lower part between a bottom surface of the first channel structure and a top surface of the active pattern, and a first upper part between a top surface of the first channel structure and a bottom surface of the second channel structure. The first lower part has a thickness greater than that of the first upper part.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile