The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Feb. 13, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Kimio Shigihara, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor laser device includes a first conductivity type cladding layer having a refractive index n, a first conductivity type side optical guide layer, an active layer, a second conductivity type side optical guide layer, and a second conductivity type cladding layer of nlaminated in order on a first conductivity type semiconductor substrate, wherein an oscillation wavelength is λ, a first conductivity type low refractive index layer of nlower than nhaving a thickness of dis provided between the first conductivity type side optical guide layer and the first conductivity type cladding layer, a second conductivity type low refractive index layer of nlower than nhaving a thickness of dis provided between the second conductivity type side optical guide layer and the second conductivity type cladding layer, and a condition of a normalization frequency v>vis satisfied.