The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Aug. 16, 2021
Applicant:
Shenzhen Raysees Ai Technology Co. Ltd., Guangdong, CN;
Inventors:
Dongseok Kang, Sunnyvale, CA (US);
Siva Kumar Lanka, Reno, NV (US);
Yongxiang He, Sunnyvale, CA (US);
Yang Wang, Hefei, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/42 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18311 (2013.01); H01S 5/18313 (2013.01); H01S 5/18361 (2013.01); H01S 5/423 (2013.01);
Abstract
A VCSEL array includes VCSEL structures on a substrate. Each VCSEL structure includes a first reflector region over the substrate, an active region over the first reflector region, a second reflector region over the active region, and an oxide aperture proximate to the active region. An oxide aperture of a VCSEL structure that is in a central region of the VCSEL array is larger than an oxide aperture of a VCSEL structure that is in an edge region of the VCSEL array.