The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2026

Filed:

Sep. 10, 2024
Applicant:

Samsung Display Co., Ltd., Yongin-Si, KR;

Inventors:

Minwoo Byun, Yongin-si, KR;

Minjoo Kim, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3266 (2016.01); G09G 3/3275 (2016.01);
U.S. Cl.
CPC ...
G09G 3/3266 (2013.01); G09G 3/3275 (2013.01); G09G 2310/08 (2013.01); G09G 2330/023 (2013.01);
Abstract

An emission driver is disclosed that includes a plurality of emission stages, and each of the emission stages includes a boosting circuit configured to boost a voltage of a control node. The boosting circuit includes a fifth transistor including a gate electrode connected to the control node, a first electrode, and a second electrode, a 17th transistor including a gate electrode configured to receive a first clock signal, a first electrode configured to receive a second low gate voltage, and a second electrode connected to the first electrode of the fifth transistor, and an 18th transistor including a gate electrode configured to receive a second clock signal having a phase that is different from a phase of the first clock signal, a first electrode configured to receive a high gate voltage, and a second electrode connected to the first electrode of the fifth transistor.


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