The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2026

Filed:

Jul. 26, 2024
Applicant:

Nxp B.v., Eindhoven, NL;

Inventors:

Anjani Kumar Mishra, Faridabad, IN;

Charan Hemanth Kumar, Bangalore, IN;

Achal Venkatesh, Bangalore, IN;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/26 (2006.01); H10D 86/00 (2025.01);
U.S. Cl.
CPC ...
G05F 3/262 (2013.01); H10D 86/201 (2025.01);
Abstract

A CTAT circuit that generates a CTAT current. The circuit includes two SOI transistors of a first conductivity type arranged in a current mirror configuration where the gates of the two transistors and the back gate contact of one of the transistors is connected to the drain of the other transistor. The SOI transistor of the first conductivity type whose back gate contact is connected to the drain of the other SOI transistor of the first conductivity type is located in current path that carries a CTAT current. In some embodiments, the drains of the two transistors are each coupled to a drain of a respective one of a second pair of SOI transistors of a second conductivity type, where the second pair of SOI transistors are also configured in a current mirror configuration.


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