The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Oct. 01, 2020
Applicant:
Alliance for Energy Innovation, Llc, Golden, CO (US);
Inventors:
Wondwosen Tilahun Metaferia, Rio Rancho, NM (US);
Kevin Louis Schulte, Denver, CO (US);
Aaron Joseph Ptak, Littleton, CO (US);
John David Simon, Austin, TX (US);
Assignee:
Alliance for Energy Innovation, LLC, Golden, CO (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/14 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 25/14 (2013.01); C30B 29/40 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/0262 (2013.01); H01L 21/02395 (2013.01); H01L 21/02433 (2013.01);
Abstract
Disclosed herein is the controlled epitaxy of AlGaAs, AlInP, and AlGaInP by hydride vapor phase epitaxy (HVPE) through use of an external AlClgenerator.
Quick Actions:
Metaferia, Wondwosen. (2026). Growth of semiconductor materials by hydride vapor phase epitaxy using an external aluminum chloride generator (U.S. Patent No. 12540417). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12540417
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