The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Jan. 17, 2023
SK Hynix Inc., Icheon, KR;
Incheon National University Research & Business Foundation, Incheon, KR;
Do Han Lee, Icheon, KR;
Eun Soo Kim, Icheon, KR;
Seung Wook Ryu, Icheon, KR;
Tae Hwan Lim, Icheon, KR;
Han-Bo-Ram Lee, Incheon, KR;
Abu Saad Aqueel Ahmad Ansari, Incheon, KR;
Ngoc Le Trinh, Incheon, KR;
SK hynix Inc., Icheon, KR;
INCHEON NATIONAL UNIVERSITY RESEARCH & BUSINESS FOUNDATION, Icheon, KR;
Abstract
A thin film deposition method and a method of fabricating an electronic device using the same are disclosed. The thin film deposition method may include preparing a substrate structure having a pattern portion including a hole, adsorbing a reaction inhibitor to inside and outside of the hole in the substrate structure, wherein an adsorption density of the reaction inhibitor may be lower in the inside than the outside, and depositing a metal layer on the inside and outside the hole by an atomic layer deposition (ALD) process, wherein a deposition rate of the depositing may vary depending on regions by the reaction inhibitor, and wherein the reaction inhibitor may include a metal atom and a ligand for reaction inhibition bonded to the metal atom, and the metal atom may remain on the substrate structure in the depositing the metal layer.