The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Apr. 10, 2023
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Tse-Yao Huang, Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/76804 (2013.01); H01L 21/76877 (2013.01); H01L 23/53266 (2013.01);
Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a conductive structure including a conductive concave layer positioned on the substrate and including a top surface having a V-shaped cross-sectional profile; and a conductive filling layer positioned on the conductive concave layer; and a top conductive layer positioned on the conductive structure. The conductive filling layer includes germanium or silicon germanium.