Silicon carbide mosfet device and manufacturing method thereof

Abstract

Disclosed is a silicon carbide MOSFET device and a manufacturing method thereof. The manufacturing method comprises: forming a source region in an epitaxial layer; forming a body region in the epitaxial layer; forming a gate structure, comprising a gate dielectric layer, a gate conductor layer and an interlayer dielectric layer; forming an opening in the interlayer dielectric layer to expose the source region; forming a source contact connected to the source region via the opening, wherein an ion implantation angle of the ion implantation process is controlled to make a transverse extension range of the body region larger than a transverse extension range of the source region, so that a channel that extends transversely is formed by a portion, which is peripheral to the source region, of the body region, and at least a portion of the gate conductor layer is located above the channel.