The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Sep. 23, 2019
The Research Foundation for the State University of New York, Albany, NY (US);
Nathaniel Cady, Delmar, NY (US);
Karsten Beckmann, Albany, NY (US);
Joseph Van Nostrand, Rome, NY (US);
The Research Foundation for the State University of New York, Albany, NY (US);
Abstract
A resistive random access memory (ReRAM) device that minimizes filament formation at the edges of the dielectric. The device has a bottom electrode and a top electrode with a switching layer disposed therebetween. The bottom electrode also has first and second sidewalls spaced apart by a first distance where the sidewalls contact the bottom surface of the switching layer. The switching layer has first and second sidewalls spaced apart with the top electrode disposed over the switching layer. The first sidewall of the switching layer overhangs the first sidewall of the bottom electrode by an overhang distance of 5 nanometers or more, and the second sidewall of the switching layer overhangs the second sidewall of the bottom electrode by an overhang distance of 5 nanometers or more.