The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2026

Filed:

Mar. 26, 2020
Applicant:

Sharp Kabushiki Kaisha, Sakai, JP;

Inventors:

Hiroshi Tsuchiya, Sakai, JP;

Masanobu Mizusaki, Sakai, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 50/11 (2023.01); H10K 50/125 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 50/852 (2023.01); H10K 85/60 (2023.01); H10K 59/80 (2023.01); H10K 101/30 (2023.01); H10K 101/40 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 50/11 (2023.02); H10K 50/125 (2023.02); H10K 50/156 (2023.02); H10K 50/166 (2023.02); H10K 50/852 (2023.02); H10K 85/611 (2023.02); H10K 59/876 (2023.02); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02); H10K 2102/351 (2023.02);
Abstract

A light-emitting element includes an anode electrode and a cathode electrode, and is provided with a first hole transport layer, a second hole transport layer, a light-emitting layer, a first electron transport layer, and a second electron transport layer. At a HOMO level, an energy level difference between the second hole transport layer and the light-emitting layer on the second hole transport layer side is from 0.0 eV to 0.15 eV, and at a LUMO level, an energy level difference between the first electron transport layer and the light-emitting layer on the first electron transport layer side is from 0.0 eV to 0.15 eV. The second electron transport layer is a mixed layer that includes an organic material having electron transport properties and an electron-accepting material and contains the electron-accepting material in an amount greater than 50 mass %.


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