Solid-state imaging element and electronic apparatus

Abstract

A solid-state imaging element () according to the present disclosure includes a pixel array unit () in which a plurality of light receiving pixels () is two-dimensionally arranged. Each of the light receiving pixels () includes an organic photoelectric conversion unit () and another photoelectric conversion unit. The organic photoelectric conversion unit () includes a photoelectric conversion layer () made of an organic semiconductor material, a first electrode () located on a light incident side of the photoelectric conversion layer (), and a second electrode () located on a side opposite to the light incident side of the photoelectric conversion layer (). The other photoelectric conversion unit is located on a side opposite to the light incident side of the organic photoelectric conversion unit (), and performs photoelectric conversion in a wavelength region different from a wavelength region of the organic photoelectric conversion unit (). The second electrode () is connected to a connection wiring () including a metal wiring () made of metal and a transparent wiring () made of a transparent conductive film. The metal wiring () extends in a horizontal direction from a peripheral portion of the light receiving pixel () to a peripheral portion of the pixel array unit ().