The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2026

Filed:

May. 22, 2025
Applicant:

Cnbm Research Institute for Advanced Glass Materials Group Co., Ltd., Bengbu, CN;

Inventors:

Stefan Gruensteidl, Grafing, DE;

Peter Borowski, Grafing, DE;

Thomas Dalibor, Grafing, DE;

Joerg Palm, Grafing, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 19/75 (2025.01); H10F 19/31 (2025.01); H10F 19/80 (2025.01); H10F 71/00 (2025.01); H10F 77/12 (2025.01);
U.S. Cl.
CPC ...
H10F 19/75 (2025.01); H10F 19/31 (2025.01); H10F 19/80 (2025.01); H10F 71/00 (2025.01); H10F 77/126 (2025.01);
Abstract

The bypass diode of each monolithic cell is formed on a substrate in the form of a thin film, and adopts a structure similar to that of the monolithic cell; each monolithic cell and the corresponding bypass diode share the same substrate; a layer treatment method for the thin film in a bypass diode region on the substrate is different from that for a cell region, and a compound material or layer sequence adopted as the layer of the thin film in the bypass diode region on the substrate is different from that in the cell region, so as to decrease a threshold voltage of the bypass diode.


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