The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Sep. 25, 2023
Nanya Technology Corporation, New Taipei, TW;
Te-Yin Chen, Taoyuan, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
A semiconductor device includes an annular semiconductor fin over a semiconductor substrate, a first bottom source/drain structure within the annular semiconductor fin, a second bottom source/drain structure surrounding the annular semiconductor fin, a first silicide layer, a second silicide layer, a first gate structure, a second gate structure, a top source/drain structure, and a contact structure over the top source/drain structure. The first silicide layer and the second silicide layer are over the first bottom source/drain structure and the bottom second source/drain structure, respectively. The first gate structure and the second gate structure are over the first silicide layer and the second silicide layer, respectively. The contact structure includes a lower contact, a middle contact over the lower contact, and an upper contact over the middle contact. A width of the upper contact is greater than a width of the middle contact.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile