The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2026

Filed:

Jun. 29, 2023
Applicant:

National Tsing Hua University, Hsinchu, TW;

Inventors:

Ho-Chun Wu, Hsinchu, TW;

Yin-Cheng Chang, Hsinchu, TW;

Shuo-Hung Hsu, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/00 (2025.01); H10D 1/66 (2025.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10D 84/212 (2025.01); H10D 1/66 (2025.01); H10D 1/714 (2025.01);
Abstract

A heterogeneous integration capacitor and a metal-oxide-metal (MoM) capacitor are provided. The heterogeneous integration capacitor has a first electrode and a second electrode, and includes a substrate, a semiconductor capacitor, the MoM capacitor, and a metal-insulator-metal (MiM) capacitor. These capacitors are sequentially formed on the substrate, and are formed as connected in parallel.


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