The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Dec. 22, 2022
Ryota Suto, Kyoto, JP;
Nobuto Hosono, Hyogo, JP;
Ryota Suto, Kyoto, JP;
Nobuto Hosono, Hyogo, JP;
RICOH COMPANY, LTD., Tokyo, JP;
Abstract
A semiconductor device includes a first gate electrode, an insulating part, a source electrode, a drain electrode, and a contact part. The insulating part is on one surface of the first gate electrode. The source electrode is connected to the insulating part. The drain electrode is connected to the insulating part. The contact part is between the source electrode and the drain electrode and on the insulating part. The contact part contains an atomic layered material. The contact part has a second part contactable with a sample. The second surface is opposite to a first surface facing the insulating part. A surface of the insulating part, the surface facing the contact part, has an uneven structure with respect to the first gate electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile