The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Apr. 28, 2020
Applicant:
Sharp Kabushiki Kaisha, Sakai, JP;
Inventors:
Assignee:
SHARP KABUSHIKI KAISHA, Sakai, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6755 (2025.01); H10D 30/031 (2025.01); H10D 30/6729 (2025.01); H10D 30/673 (2025.01); H10D 30/6757 (2025.01);
Abstract
A transistor includes a bottom gate insulating film, an oxide semiconductor film, a top gate insulating film, a top gate electrode, a first interlayer insulating film, a source electrode, and a drain electrode, wherein the first interlayer insulating film contains carbon atoms, oxygen atoms, hydrogen atoms, and silicon atoms, hydrogen contained in the first interlayer insulating film has a higher concentration than hydrogen contained in the top gate insulating film, and oxygen contained in the first interlayer insulating film has a lower concentration than oxygen contained in the top gate insulating film.