The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Jul. 17, 2023
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device according to the present disclosure includes: a semiconductor substrate including at least: an n-type first semiconductor layer; an n-type second semiconductor layer on the first semiconductor layer; a p-type third semiconductor layer on the second semiconductor layer; and an n-type fourth semiconductor layer on an upper layer part of the third semiconductor layer; a plurality of first trench gates passing through the fourth to second semiconductor layers to reach an inner side of the first semiconductor layer; and a first main electrode having contact with the fourth semiconductor layer; wherein the plurality of first trench gates are disconnected in an electrode extraction region provided in a center part of the active region where main current flows, and are connected to the first main electrode in a first electrode extraction part connected to the first gate electrode in the disconnected part.