The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
May. 27, 2022
Boe Technology Group Co., Ltd., Beijing, CN;
Jiayu He, Beijing, CN;
Yan Qu, Beijing, CN;
Ce Ning, Beijing, CN;
Hehe Hu, Beijing, CN;
Zhengliang Li, Beijing, CN;
Nianqi Yao, Beijing, CN;
Jie Huang, Beijing, CN;
Kun Zhao, Beijing, CN;
Feifei Li, Beijing, CN;
Liping Lei, Beijing, CN;
BOE Technology Group Co., Ltd., Beijing, CN;
Abstract
A tunneling field effect transistor includes a gate electrode, a tunneling field active layer, a first electrode, and a second electrode disposed on a base substrate; the tunneling field active layer includes a first-type active layer and a second-type active layer that are stacked, wherein the first-type active layer includes a first-type channel region and a first source-drain region, the second-type active layer includes a second-type channel region and a second source-drain region, an orthographic projection of the first-type channel region on the base substrate is completely overlapped with an orthographic projection of the second-type channel region on the base substrate, the first source-drain region is located at a side of the tunneling field active layer and is connected with the first electrode.