The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Dec. 28, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Eunsun Kim, Suwon-si, KR;
Boeun Park, Hwaseong-si, KR;
Cheolhyun An, Seongnam-si, KR;
Hyungjun Kim, Suwon-si, KR;
Younggeun Park, Suwon-si, KR;
Jeongil Bang, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of forming a semiconductor device includes forming a first electrode on a single-crystal structure. A dielectric layer is formed on the first electrode. A second electrode is formed on the dielectric layer. The forming a dielectric layer includes forming a first dielectric layer having a single-crystal perovskite structure on the first electrode, and forming a second dielectric layer on the first dielectric layer. An upper surface of the first dielectric layer adjacent to the second dielectric layer has a greater surface roughness than an upper surface of the second dielectric layer adjacent to the second electrode.