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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12538486 B1

PDFFull Text
Date of Patent:
Jan. 27, 2026

Filed:

Jun. 18, 2021

Semiconductor memory device having first net-shaped source pattern, second source pattern and pad pattern therebetween

Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventor:

Nam Jae Lee, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:

WILLIAM PARK AND ASSOCIATES LTD.

Primary Examiner:

Davienne N Monbleau

Assistant Examiner:

John Patrick Cornely

Int. Cl.
CPC ...
H10B 41/41 (2023.01); G11C 7/18 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 41/41 (2023.02); G11C 7/18 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02);
Abstract

There are provided a semiconductor memory device and a manufacturing method of the same. The semiconductor memory device includes: a peripheral circuit structure with a page buffer group; a net-shaped first source pattern disposed on the peripheral circuit structure, the net-shaped first source pattern with a plurality of openings; a memory cell array disposed on the net-shaped first source pattern; a second source pattern disposed between the net-shaped first source pattern and the memory cell array; and a cell-array-side pad pattern, disposed between the net-shaped first source pattern and the second source pattern, extending toward the net-shaped first source pattern from the second source pattern, the cell-array-side pad pattern being bonded directly to the net-shaped first source pattern.

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