The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2026

Filed:

Jul. 12, 2023
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Hye Won Yoon, Gyeonggi-do, KR;

Seung Hwan Kim, Gyeonggi-do, KR;

Kang Sik Choi, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H01L 23/5283 (2013.01); H10B 12/02 (2023.02); H10B 12/30 (2023.02); H10B 12/48 (2023.02); H10B 12/482 (2023.02);
Abstract

A semiconductor device including highly integrated memory cells and a method for fabricating the same. The semiconductor device may include: a vertical conductive line; a horizontal layer horizontally oriented from the vertical conductive line and including a first horizontal portion and a second horizontal portion thinner than the first horizontal portion; a horizontal conductive line crossing the first horizontal portion of the horizontal layer; and a data storage element including a first electrode including a merged double cylinder coupled to the second horizontal portion of the horizontal layer.


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