The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2026

Filed:

May. 26, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Yin-Fa Chen, New Taipei, TW;

Jui-Hsiu Jao, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/09 (2023.02); H10B 12/50 (2023.02); H10B 12/053 (2023.02); H10B 12/315 (2023.02); H10B 12/482 (2023.02); H10B 12/485 (2023.02);
Abstract

The present application provides a method of manufacturing a semiconductor device. The method includes steps of providing a substrate comprising a first island and a second island, wherein the first island has a first area and the second island has a second area greater than the first area; depositing an insulative layer to cover the substrate; forming a conductive feature penetrating through the insulative layer and contacting the second island; and forming a conductive line on the insulative layer and connected to the conductive feature.


Find Patent Forward Citations

Chen, Yin-Fa. (2026). Method of fabricating semiconductor device with programmble feature (U.S. Patent No. 12538468). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12538468

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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