The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2026

Filed:

Dec. 06, 2021
Applicant:

Techpoint, Inc., San Jose, CA (US);

Inventors:

Motonobu Torii, Tokyo, JP;

Gen Kasai, Tokyo, JP;

Assignee:

TECHPOINT, INC., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/65 (2023.01); H04N 23/745 (2023.01); H04N 25/51 (2023.01); H04N 25/78 (2023.01);
U.S. Cl.
CPC ...
H04N 25/65 (2023.01); H04N 23/745 (2023.01); H04N 25/51 (2023.01); H04N 25/78 (2023.01);
Abstract

An imaging element includes: a photodiode, a first FD, a second FD, a TRG transistor, an amplification transistor, a DGC transistor for switching a conversion gain, when converting charges into a pixel signal, to a high gain or a low gain, a capacitor, an OFG transistor for transferring charges overflowing from the photodiode to the second FD, and an RST transistor. During an imaging action involving a long exposure time, after reset is carried out, with the conversion gain being switched to the high gain, the pixel signal is read and employed as a high-gain reset signal. Then, after the TRG transistor is conducted, the pixel signal is read and employed as a high-gain signal. A first signal which is a difference between the high-gain signal and the high-gain reset signal is outputted.


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