The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Jun. 03, 2024
SK Hynix Inc., Icheon, KR;
Yoon Mo Koo, Icheon-si, KR;
Myoungsub Kim, Icheon-si, KR;
Jae Hyuk Park, Icheon-si, KR;
Sang Chul Oh, Icheon-si, KR;
Beom Seok Lee, Icheon-si, KR;
Won Jun Lee, Icheon-si, KR;
SK hynix Inc., Icheon, KR;
Abstract
A semiconductor device may include a read disturb reduction circuit, a first selection switch that is turned on based on a bit line selection signal, a second selection switch that that is turned on based on a word line selection signal, a memory cell electrically connected between the first selection switch and the second selection switch, a first bias voltage generation circuit configured to provide a first bias voltage to the memory cell through the first selection switch, a second bias voltage generation circuit configured to provide a second bias voltage to the memory cell through the first selection switch, a third bias voltage generation circuit configured to provide a third bias voltage to the memory cell through the second selection switch, and a connection switch configured to electrically connect or separate the read disturbance reduction circuit and the second selection switch.