The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Jun. 30, 2022
Technische Universiteit Delft, Delft, NL;
Menno Veldhorst, Zoetermeer, NL;
Nico Willem Hendrickx, Delft, NL;
Technische Universiteit Delft, Delft, NL;
Abstract
A method of controlling random charge effects originating from local defects (---) above a quantum dot in a quantum dot array is described, wherein the method comprises: selecting one or more electrodes (Vg, Vb) configured to control one or more quantum structures formed in one or more semiconductor layers arranged on a substrate; and, applying one or more first voltage pulses (inset) to the one or more selected electrodes, the amplitude of the one or more first voltage pulses being selected to induce a shift in one or more charge states (---) of one or more offset charges in one or more dielectric, semiconductor and/or interface layers between the one or more selected electrodes (Vg, Vb) and the one or more semiconductor layers in which the one or more quantum dots are formed by the application of voltages on one or more electrodes (Vg, Vb).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile