The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2026

Filed:

Sep. 08, 2021
Applicant:

Lodestar Licensing Group Llc, Evanston, IL (US);

Inventor:

Dmitri Yudanov, Rancho Cordova, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/06 (2006.01); G06F 12/0877 (2016.01); G06F 13/16 (2006.01); G11C 11/4091 (2006.01); G11C 11/4094 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0646 (2013.01); G06F 12/0877 (2013.01); G06F 13/1694 (2013.01); G11C 11/4091 (2013.01); G11C 11/4094 (2013.01); G06F 2212/1024 (2013.01);
Abstract

An apparatus having a memory array. The memory array having a first section and a second section. The first section of the memory array including a first sub-array of memory cells made up of a first type of memory. The second section of the memory array including a second sub-array of memory cells made up of the first type of memory with a configuration to each memory cell of the second sub-array that is different from the configuration to each cell of the first sub-array. Alternatively, the section can include memory cells made up of a second type of memory that is different from the first type of memory. Either way, the second type of memory or the differently configured first type of memory has memory cells in the second sub-array having less memory latency than each memory cell of the first type of memory in the first sub-array.


Find Patent Forward Citations

Loading…