The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2026

Filed:

Apr. 18, 2024
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hwasuk Cho, Suwon-si, KR;

Seungwoo Yu, Suwon-si, KR;

Byungkwan Chun, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1016 (2013.01); G06F 11/1064 (2013.01);
Abstract

A nonvolatile memory device includes a plurality of latch groups, an address controller, an encoder, and a buffer. The address controller controls an input address and an output address to indicate one of the plurality of latch groups. The encoder receives sector data from a latch group corresponding to the output address among the plurality of latch groups and also compresses the received sector data. The buffer stores the compressed sector data. Among the plurality of latch groups, the compressed sector data stored in the buffer is overwritten in a latch group corresponding to the input address.


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Cho, Hwasuk. (2026). Nonvolatile memory (U.S. Patent No. 12536066). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12536066

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