The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Feb. 18, 2021
Applicant:
Forge Nano, Inc., Thornton, CO (US);
Inventors:
Daniel Higgs, Longmont, CO (US);
Chris Gump, Thornton, CO (US);
Karen Buechler, Westminster, CO (US);
Jennette Warner, Thornton, CO (US);
Paul Nelson, Thornton, CO (US);
David M. King, Thornton, CO (US);
Arrelaine Dameron, Thornton, CO (US);
James Trevey, Thornton, CO (US);
Assignee:
Forge Nano, Inc., Thornton, CO (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 15/00 (2006.01); B22F 1/05 (2022.01); B22F 1/16 (2022.01); B32B 5/16 (2006.01); B32B 5/30 (2006.01); C22C 1/04 (2023.01); C22C 32/00 (2006.01); C23C 14/08 (2006.01); C23C 14/22 (2006.01); C23C 16/04 (2006.01); C23C 16/40 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/46 (2006.01); H01G 4/008 (2006.01); H01G 4/12 (2006.01); H01G 4/30 (2006.01);
U.S. Cl.
CPC ...
C22C 32/00 (2013.01); B22F 1/05 (2022.01); B22F 1/16 (2022.01); B32B 5/16 (2013.01); B32B 5/30 (2013.01); B32B 15/00 (2013.01); C22C 1/0416 (2013.01); C22C 1/0458 (2013.01); C22C 1/0483 (2013.01); C22C 32/001 (2013.01); C23C 14/08 (2013.01); C23C 14/083 (2013.01); C23C 14/223 (2013.01); C23C 16/04 (2013.01); C23C 16/045 (2013.01); C23C 16/40 (2013.01); C23C 16/401 (2013.01); C23C 16/403 (2013.01); C23C 16/404 (2013.01); C23C 16/405 (2013.01); C23C 16/45525 (2013.01); C23C 16/45527 (2013.01); C23C 16/45529 (2013.01); C23C 16/45553 (2013.01); C23C 16/45555 (2013.01); C23C 16/466 (2013.01); H01G 4/008 (2013.01); H01G 4/1227 (2013.01); H01G 4/1236 (2013.01); H01G 4/306 (2013.01); C23C 16/4417 (2013.01); Y10T 428/12014 (2015.01); Y10T 428/12028 (2015.01); Y10T 428/12049 (2015.01); Y10T 428/12056 (2015.01); Y10T 428/1209 (2015.01); Y10T 428/12104 (2015.01); Y10T 428/12181 (2015.01); Y10T 428/12222 (2015.01); Y10T 428/12229 (2015.01); Y10T 428/26 (2015.01); Y10T 428/265 (2015.01); Y10T 428/29 (2015.01); Y10T 428/2973 (2015.01); Y10T 428/298 (2015.01); Y10T 428/2982 (2015.01); Y10T 428/2991 (2015.01);
Abstract
The use of Atomic Layer Deposition (ALD) and Molecular Layer Deposition (MLD) applied to powders and intermediates of the MLCC fabrication process can provide significant advantages. Coating metal particles within a defined range of ALD cycles is shown to provide enhanced oxidation resistance. Surprisingly, a very thin ALD layer was found to substantially increase sintering temperature.