The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2026

Filed:

Sep. 30, 2021
Applicants:

Chengdu Boe Optoelectronics Technology Co., Ltd., Chengdu, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Cong Liu, Beijing, CN;

Yao Huang, Beijing, CN;

Binyan Wang, Beijing, CN;

Yu Wang, Beijing, CN;

Benlian Wang, Beijing, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10K 59/131 (2023.01); H10K 59/121 (2023.01); H10K 59/126 (2023.01); H10K 59/35 (2023.01);
U.S. Cl.
CPC ...
H10K 59/131 (2023.02); H10K 59/1213 (2023.02); H10K 59/126 (2023.02); H10K 59/353 (2023.02);
Abstract

Embodiments of the present disclosure provide a display substrate and a display device. The display substrate includes a base substrate, a driving circuit layer on the base substrate, a light-emitting structure layer on a side of the driving circuit layer away from the base substrate, and a shield electrode layer on a side of the driving circuit layer proximal to the base substrate. The light-emitting structure layer includes a plurality of light-emitting devices. The driving circuit layer includes a plurality of pixel driving circuits. At least part of transistors in each of the pixel driving circuits are oxide thin film transistors, and at least part of transistors are low-temperature polycrystalline silicon thin film transistors.


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