The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2026

Filed:

Jan. 29, 2024
Applicant:

Adeia Semiconductor Inc., San Jose, CA (US);

Inventors:

Ashish Tandon, Sunnyvale, CA (US);

Rajat Sharma, San Jose, CA (US);

Joseph Flemish, Palo Alto, CA (US);

Andrei Papou, San Jose, CA (US);

Wen Yu, Pleasanton, CA (US);

Erik William Young, San Jose, CA (US);

Yu-Chen Shen, San Jose, CA (US);

Luke Gordon, Santa Barbara, CA (US);

Assignee:

Adeia Semiconductor Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 29/14 (2025.01); F21S 41/153 (2018.01); H01S 5/00 (2006.01); H10H 20/01 (2025.01); H10H 20/813 (2025.01); H10H 20/819 (2025.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01); H10H 20/83 (2025.01); H10H 20/851 (2025.01);
U.S. Cl.
CPC ...
H10H 29/142 (2025.01); F21S 41/153 (2018.01); H01S 5/00 (2013.01); H10H 20/01335 (2025.01); H10H 20/819 (2025.01); H10H 20/8242 (2025.01); H10H 20/8512 (2025.01); H10H 20/8514 (2025.01); H10H 20/8515 (2025.01); H10H 20/018 (2025.01); H10H 20/032 (2025.01); H10H 20/0361 (2025.01); H10H 20/813 (2025.01); H10H 20/825 (2025.01); H10H 20/83 (2025.01);
Abstract

A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.


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