The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2026

Filed:

Dec. 06, 2021
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Seung A Lee, Yongin-si, KR;

Hoo Keun Park, Yongin-si, KR;

Young Jin Song, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/824 (2025.01); H10H 20/01 (2025.01); H10H 20/818 (2025.01); H01L 25/075 (2006.01);
U.S. Cl.
CPC ...
H10H 20/824 (2025.01); H10H 20/013 (2025.01); H10H 20/818 (2025.01); H01L 25/0753 (2013.01);
Abstract

A light emitting element includes: a first semiconductor layer including a semiconductor of a first type; a second semiconductor layer including a semiconductor of a second type different from the first type; and an active layer between the first and second semiconductor layers, the active layer including a first active area including a first well layer, and a second active area including a second well layer. The first well layer has a first band gap, and the second well layer has a second band gap smaller than the first band gap. At least a portion of the first active area is between the second active area and the second semiconductor layer. A distance between the second active area and the second semiconductor layer is equal to or greater than 0.1 times of a distance between the first and second semiconductor layers.


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