The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2026

Filed:

Jul. 07, 2021
Applicant:

Hamamatsu Photonics K.k., Hamamatsu, JP;

Inventors:

Yoshinori Tsukada, Hamamatsu, JP;

Kohei Kasamori, Hamamatsu, JP;

Masaki Hirose, Hamamatsu, JP;

Yoshihisa Warashina, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 30/225 (2025.01); H10F 77/30 (2025.01);
U.S. Cl.
CPC ...
H10F 30/225 (2025.01); H10F 77/334 (2025.01);
Abstract

A photodetection device includes a photodetection element and a package. The photodetection element includes a semiconductor substrate and a light absorption film. The light absorption film is provided on a region of at least a part of a region around a photodetection region on a principal surface of the semiconductor substrate. The light absorption film has a multi-layer structure including a light absorption layer, a resonance layer, and a reflection layer. At a wavelength of detection target light, a light transmittance inside the resonance layer is larger than a light transmittance inside the light absorption layer, and a light reflectance on a surface of the reflection layer is larger than a light reflectance on a surface of the resonance layer.


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