The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Aug. 26, 2021
Rohm Co., Ltd., Kyoto, JP;
Yuya Tamura, Kyoto, JP;
ROHM CO. LTD., Kyoto, JP;
Abstract
A semiconductor device includes an electron transit layer formed on first principal surface of the semiconductor layer, an electron supply layer formed on the electron transit layer, a gate conductive layer formed on the electron supply layer, a source conductive layer and a drain conductive layer that are formed on the electron supply layer such that the gate conductive layer is interposed between the source conductive layer and the drain conductive layer, an anode conductive layer that is formed on second principal surface of the semiconductor layer and that is electrically connected to the source conductive layer, a cathode conductive layer that is formed on the first principal surface of the semiconductor layer and that is electrically connected to the drain conductive layer, and a rectifying element formed by a part of the semiconductor layer such that the rectifying element is electrically connected to the anode and cathode conductive layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile