The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2026

Filed:

Sep. 08, 2022
Applicants:

The Regents of the University of Michigan, Ann Arbor, MI (US);

The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);

Inventors:

Rebecca L. Peterson, Ann Arbor, MI (US);

Ming-Hsun Lee, Ann Arbor, MI (US);

Alan G. Jacobs, Rockville, MO (US);

Marko J. Tadjer, Vienna, VA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/80 (2025.01); H01L 21/425 (2006.01); H01L 21/441 (2006.01); H01L 21/443 (2006.01); H01L 21/465 (2006.01); H10D 1/40 (2025.01); H10D 8/60 (2025.01); H10D 30/47 (2025.01); H10D 30/63 (2025.01); H10D 30/87 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 62/17 (2025.01); H10D 64/23 (2025.01); H10D 64/62 (2025.01); H10F 30/227 (2025.01); H10F 77/12 (2025.01);
U.S. Cl.
CPC ...
H10D 64/62 (2025.01); H01L 21/425 (2013.01); H01L 21/443 (2013.01); H01L 21/465 (2013.01); H10D 62/80 (2025.01);
Abstract

A method for controlling a concentration of donors in an Al-alloyed gallium oxide crystal structure includes implanting a Group IV element as a donor impurity into the crystal structure with an ion implantation process and annealing the implanted crystal structure to activate the Group IV element to form an electrically conductive region. The method may further include depositing one or more electrically conductive materials on at least a portion of the implanted crystal structure to form an ohmic contact. Examples of semiconductor devices are also disclosed and include a layer of an Al-alloyed gallium oxide crystal structure, at least one region including the crystal structure implanted with a Group IV element as a donor impurity with an ion implantation process and annealed to activate the Group IV element, an ohmic contact including one or more electrically conductive materials deposited on the at least one region.


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