The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2026

Filed:

Aug. 10, 2021
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Ryosuke Yamachi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/62 (2025.01); H10D 64/27 (2025.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10D 64/516 (2025.01); H10D 30/62 (2025.01); H10F 39/80373 (2025.01);
Abstract

Provided are a semiconductor apparatus, an imaging device, and an electronic apparatus that improve the gate controllability of a field-effect transistor. The field-effect transistor of the apparatus includes a semiconductor region in which a channel is formed, a gate electrode covering the semiconductor region, and a gate insulating film between the semiconductor region and the gate electrode. The semiconductor region has an upper surface and a first side surface on one side of the upper surface in a gate width direction of the gate electrode. The gate electrode includes a first portion facing the upper surface and a second portion facing the first side surface. The gate insulating film includes a first film portion between the upper surface and the first portion, and a second film portion between the first side surface and the second portion. The second film portion is thickest in a portion close to the upper surface.


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