The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2026

Filed:

Aug. 24, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ho-Jun Kim, Suwon-si, KR;

Jun Beom Park, Suwon-si, KR;

Kwan Young Chun, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6757 (2025.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a lower substrate; a lower active pattern which extends in a first direction on the lower substrate; a first lower gate electrode which extends in a second direction on the lower active pattern; an upper substrate on the first lower gate electrode; an upper active pattern which extends in the first direction on the upper substrate, wherein the upper active pattern is spaced apart from the lower active pattern in each of the second direction and a vertical direction; a first upper gate electrode which extends in the second horizontal direction on the upper active pattern, wherein the first upper gate electrode at least partially overlaps the first lower gate electrode in the vertical direction; and a first gate contact which is spaced apart from the first upper gate electrode in the second horizontal direction.


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