The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Apr. 03, 2023
Taiwan Semiconductor Manufacturing Co. Ltd., Hsin-Chu, TW;
Kuo-Cheng Ching, Hsinchu County, TW;
Chih-Hao Wang, Hsinchu County, TW;
Kuan-Lun Cheng, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
An integrated circuit (IC) structure includes a first channel region, a first gate metal engaging the first channel region, a first dielectric material layer disposed under the first gate metal and on an end of the first gate metal, a second channel region, a second gate metal engaging the second channel region, a second dielectric material layer disposed under the second gate metal and on an end of the second gate metal, and a dielectric block disposed between the end of the first gate metal and the end of the second gate metal. A horizontal portion of the first dielectric material layer abuts a horizontal portion of the second dielectric material layer, and the horizontal portion of the first dielectric material layer and the horizontal portion of the second dielectric material layer are in physical contact with the dielectric block.