Semiconductor device including oxide semiconductor and method for fabricating the same

Abstract

A semiconductor device includes: a substrate; two heating patterns arranged to be spaced apart from each other over the substrate; two metal oxide patterns respectively positioned over the two heating patterns; two second oxide semiconductor patterns comprising source/drain regions and respectively positioned over the two metal oxide patterns; a first oxide semiconductor pattern forming a channel region positioned between the two second oxide semiconductor patterns; a gate electrode positioned over or below the first oxide semiconductor pattern; and a gate dielectric layer interposed between the gate electrode and the first oxide semiconductor pattern, wherein an oxygen density of the two second oxide semiconductor patterns is smaller than an oxygen density of the first oxide semiconductor pattern.