The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2026

Filed:

Jun. 07, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Keisuke Nakatsuka, Kobe Hyogo, JP;

Yasuhiro Uchiyama, Yokkaichi Mie, JP;

Akira Mino, Yokkaichi Mie, JP;

Masayoshi Tagami, Kuwana Mie, JP;

Shinya Arai, Yokkaichi Mie, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 80/00 (2023.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 80/00 (2023.02); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02); H01L 2224/08145 (2013.01); H01L 2224/80006 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01);
Abstract

A semiconductor storage device of an embodiment includes a substrate, a plurality of first conductive layers, pillar, and a second conductive layer. The plurality of first conductive layers are provided above the substrate, and mutually separated in a first direction. The pillar is provided to penetrate the plurality of the first conductive layers, and includes a first semiconductor layer extending in the first direction. A part of the pillar that intersects with the first conductive layers are functioned as memory cells. The second conductive layer is provided above the plurality of first conductive layers and is in contact with the first semiconductor layer. The second conductive layer is made of a metal or a silicide.


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