The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Mar. 07, 2023
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Kazuyuki Omori, Tokyo, JP;
Tadashi Yamaguchi, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
H10B 51/30 (2023.02);
Abstract
A ferroelectric memory cell includes a paraelectric film formed on a semiconductor substrate and a ferroelectric layer formed on the paraelectric film. The ferroelectric layer includes ferroelectric films and a plurality of grains. The ferroelectric films are made of a material containing a metal oxide and a first element. The plurality of grains are made of a material different from the material forming the ferroelectric films, and are made of a ferroelectric.