The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2026

Filed:

Sep. 26, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyunghwan Lee, Suwon-si, KR;

Yongseok Kim, Suwon-si, KR;

Hyuncheol Kim, Seoul, KR;

Jongman Park, Hwaseong-si, KR;

Dongsoo Woo, Seoul, KR;

Minjun Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/30 (2023.01); H10B 12/00 (2023.01); H10B 51/20 (2023.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10B 51/30 (2023.02); H10B 12/20 (2023.02); H10B 12/30 (2023.02); H10B 51/20 (2023.02); H10D 64/512 (2025.01);
Abstract

A semiconductor device includes a plurality of gate electrodes extending on a substrate in a first horizontal direction and each including first and second vertical extension sidewalls that are opposite to each other, a channel arranged on the first vertical extension sidewall of each gate electrode and including a vertical extension portion, a ferroelectric layer and a gate insulating layer that are sequentially located between the channel layer and the first vertical extension sidewall of each gate electrode, an insulating layer on the second vertical extension sidewall of each gate electrode, and a plurality of bit lines electrically connected to the channel layer and extending in a second horizontal direction that is different from the first horizontal direction.


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